Analysis of thermoelectric and thermomechanical effects in MOSFETs

As the dimensions of transistors continue to shrink, the effect of self-heating becomes more pronounced. With such downscaling, the thermal conductivity of ultra-thin body transistors causes considerable change in electrical and mechanical properties of the device. This paper investigates the thermo-electric and the thermo-mechanical effects of stresses and strains in MOSFETs. Nanoscale device dimensions and complicated device geometries coupled with novel but thermally insulating materials build up a stress along the channel and drain of the MOSFET. The stress and strain in these thin refractory layers affect the mobility of the carriers and the drain current. Here an analysis of the impacts of stress and strain on the electrical performance of MOSFETs is presented.