Title :
Cs´ effect on the stability of GaAs photocahode
Author :
Zhang, J.J. ; Zhang, Y.J. ; Niu, Jianwei ; Du, Y.J. ; Li, Bing ; Chang, B.K.
Author_Institution :
Sch. of Electron. Eng. & Optoelectron. Tech., Nanjing Univ. of Sci. & Technol., Nanjing, China
Abstract :
In this paper, two comparative experiments have been carried out to study Cs´ effect on the stability of GaAs photocathode. Experiments show that Cs of a certain concentration helps extend the life of photocathode, and the decay of photocathode is not caused by Cs desorption but oxide adsorption.
Keywords :
III-V semiconductors; adsorption; caesium; gallium arsenide; photocathodes; Cs effects; GaAs-Cs; desorption; oxide adsorption; photocathode stability;
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
DOI :
10.1109/IVESC.2010.5644325
