Title :
Design of novel high isolation RF wideband low noise amplifier for digital TV applications
Author_Institution :
Dept. Of Electr. Eng., American Univ. of Sharjah, Sharjah, United Arab Emirates
Abstract :
In this paper the design of a high gain low noise amplifier is presented. The LNA was successfully designed to operate over VHF and UHF ranges according to DVB-T specifications. The novelty of the design lies in the achievement of low noise figure across a wide bandwidth and high reverse isolation level. The latter was required in order to integrate the front-end block to a direct-conversion receiver. Such isolation would not normally be achieved with the resistive feedback technique employed here to enhance the operating bandwidth. A measured compression point of P1dB=-10 dBm, a small-signal gain = 16 dB and gain flatness of less than 1 dB ripple, have all met commercial specifications tested over corners. Noise figure achieved was better than specified and was less than 2 dB over all the bandwidth. The paper shows design and measurements techniques that enabled the successful implementation of this front-end block using a commercial 0.25u Si BiCMOS process.
Keywords :
BiCMOS integrated circuits; UHF amplifiers; VHF amplifiers; digital video broadcasting; isolation technology; low noise amplifiers; DVB-T; LNA; RF wideband low noise amplifier; Si BiCMOS; digital TV; direct-conversion receiver; front-end block; isolation level; noise figure; Bandwidth; Broadband amplifiers; Digital TV; Digital video broadcasting; Feedback; Gain; Low-noise amplifiers; Noise figure; Radio frequency; Radiofrequency amplifiers; BiCMOS; DVB-T; Wideband receivers; direct-conversion; feedback network;
Conference_Titel :
Microelectronics, 2008. ICM 2008. International Conference on
Conference_Location :
Sharjah
Print_ISBN :
978-1-4244-2369-9
Electronic_ISBN :
978-1-4244-2370-5
DOI :
10.1109/ICM.2008.5393775