Design and Power Optimization of CMOS RF Blocks Operating in the Moderate Inversion Region

Author

Barboni, Leonardo ; Fiorelli, Rafaella ; Silveira, Fernando

Author_Institution

Inst. de Ingenieria Electrica, Univ. de la Republica, Montevideo

fYear

2005

fDate

4-7 Sept. 2005

Firstpage

127

Lastpage

132

Abstract

In this work the design of radiofrequency CMOS circuit blocks in the 910MHz ISM band, while biasing the MOS transistor in the moderate inversion region, is analyzed. An amplifier design tool is presented. This tool shows that it exists an optimum in the power consumption for a given gain. Different technologies are compared, using the proposed tool, regarding its performance in terms of gain and power consumption in the design space I_D-g_m/I_D. The frequency limit of the applied transistor model is discussed and comparisons with simulations using BSIM3v3 are presented. Implementation of a power amplifier and a VCO at 910 MHz in 0.35mum CMOS technology and experimental results are also shown

Keywords

CMOS integrated circuits; UHF integrated circuits; integrated circuit design; power amplifiers; radiofrequency amplifiers; voltage-controlled oscillators; 0.35 micron; 910 MHz; BSIM3v3; CMOS RF block design; CMOS RF block power optimization; MOS transistor; amplifier design tool; inversion region; power amplifier; radio frequency integrated circuit; radiofrequency CMOS design; voltage controlled oscillator; CMOS technology; Circuits; Design optimization; Energy consumption; MOSFETs; Performance gain; Radio frequency; Radiofrequency amplifiers; Semiconductor device modeling; Space technology; Amplifier Design; CMOS Integrated Circuits; Design; Power optimization; Radio frequency Integrated Circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits and Systems Design, 18th Symposium on

Conference_Location

Florianopolis

Print_ISBN

1-59593-174-0

Type

conf

DOI

10.1109/SBCCI.2005.4286844

Filename

4286844