Synthesis and characteristics of large area graphene on SiC

This paper discusses synthesis of homoepitaxial graphene on the polar surfaces of silicon carbide.The growth involves a number of annealing steps of SiC single crystal wafers in hydrogen and argon atmospheres and results in the homogeneous coverage of whole wafers. Hydrogen intercalation removes the interface layer with drastic and desirable results for the electronic properties of graphene including a reversal in the spontaneous doping polarity. Transport properties including room temperature QHE and a nascent ballistic transport device are also discussed.