Title :
New developments in silicon technology
Author :
Beenakker, C.I.M.
Author_Institution :
Inst. for Microelectron. & Submicron Technol., Delft Univ. of Technol., Netherlands
Abstract :
This paper addresses new developments related to silicon technology and silicon devices in the areas of high speed integrated circuits, intelligent sensors, solar cells and large area electronics. These areas benefit strongly from the rapid advances made in ULSI technology without directly needing lateral dimensions in the 100 nm region and the extremely high investments related to these. As such, they form highly relevant research areas, which can successfully be executed in an academic environment. As examples, silicon-on-anything technology, high speed biochemical analysis systems, high speed deposition systems for solar cells and a new approach for making location controlled high performance TFTs on glass substrates are discussed briefly
Keywords :
ULSI; biosensors; chemical sensors; elemental semiconductors; high-speed integrated circuits; integrated circuit technology; intelligent sensors; large screen displays; plasma deposition; silicon; silicon-on-insulator; solar cells; thin film transistors; 100 nm; Si; ULSI technology; glass substrates; high speed biochemical analysis systems; high speed deposition systems; high speed integrated circuits; intelligent sensors; large area electronics; location controlled TFTs; nanoscale lateral dimensions; plasma deposition; silicon devices; silicon technology; silicon-on-anything technology; solar cells; Biochemical analysis; Control systems; Glass; High speed integrated circuits; Integrated circuit technology; Intelligent sensors; Investments; Photovoltaic cells; Silicon devices; Ultra large scale integration;
Conference_Titel :
Semiconductor Electronics, 2000. Proceedings. ICSE 2000. IEEE International Conference on
Conference_Location :
Guoman Port Dickson Resort
Print_ISBN :
0-7803-6430-9
DOI :
10.1109/SMELEC.2000.932299
