Title :
Modeling SiC MPS diodes
Author :
Zarebski, Janusz ; Gorecki, Krzysztof ; Dabrowski, Jacek
Author_Institution :
Dept. of Marine Electron., Gdynia Maritime Univ., Gdynia, Poland
Abstract :
This paper concerns the problem of SPICE modeling of the class of silicon-carbide MPS diodes with thermal effects (self-heating) taken into account. In the paper the SPICE electrothermal model by Infineon Technologies of SiC MPS diodes is considered and described in detail. The model is verified experimentally by comparing the calculated and measured device characteristics. The simple modification of the model causing the improvement of its accuracy is proposed. The diode IDT06S60C is chosen for investigation.
Keywords :
SPICE; Schottky diodes; p-i-n diodes; semiconductor device models; silicon compounds; wide band gap semiconductors; Infineon Technologies; MPS diodes; SPICE electrothermal model; SiC; diode IDT06S60C; merged p-i-n Schottky diodes; self-heating; thermal effects; Electric resistance; Electrothermal effects; Isothermal processes; P-i-n diodes; SPICE; Schottky diodes; Semiconductor device manufacture; Semiconductor diodes; Silicon carbide; Temperature; SPICE; SiC MPS diodes; modeling;
Conference_Titel :
Microelectronics, 2008. ICM 2008. International Conference on
Conference_Location :
Sharjah
Print_ISBN :
978-1-4244-2369-9
Electronic_ISBN :
978-1-4244-2370-5
DOI :
10.1109/ICM.2008.5393829
