DocumentCode
3219717
Title
Modeling SiC MPS diodes
Author
Zarebski, Janusz ; Gorecki, Krzysztof ; Dabrowski, Jacek
Author_Institution
Dept. of Marine Electron., Gdynia Maritime Univ., Gdynia, Poland
fYear
2008
fDate
14-17 Dec. 2008
Firstpage
192
Lastpage
195
Abstract
This paper concerns the problem of SPICE modeling of the class of silicon-carbide MPS diodes with thermal effects (self-heating) taken into account. In the paper the SPICE electrothermal model by Infineon Technologies of SiC MPS diodes is considered and described in detail. The model is verified experimentally by comparing the calculated and measured device characteristics. The simple modification of the model causing the improvement of its accuracy is proposed. The diode IDT06S60C is chosen for investigation.
Keywords
SPICE; Schottky diodes; p-i-n diodes; semiconductor device models; silicon compounds; wide band gap semiconductors; Infineon Technologies; MPS diodes; SPICE electrothermal model; SiC; diode IDT06S60C; merged p-i-n Schottky diodes; self-heating; thermal effects; Electric resistance; Electrothermal effects; Isothermal processes; P-i-n diodes; SPICE; Schottky diodes; Semiconductor device manufacture; Semiconductor diodes; Silicon carbide; Temperature; SPICE; SiC MPS diodes; modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2008. ICM 2008. International Conference on
Conference_Location
Sharjah
Print_ISBN
978-1-4244-2369-9
Electronic_ISBN
978-1-4244-2370-5
Type
conf
DOI
10.1109/ICM.2008.5393829
Filename
5393829
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