Title :
Determination of semiconductor properties through Hall-effect measurement with contactless microwave techniques
Author :
Xinqing Sheng ; Shanjia Xu
Author_Institution :
Dept. of Electron. Eng. & Inf Sci., Univ. of Sci. & Technol. of China, Hefei, China
Abstract :
The scattering characteristics of semiconductors with tensor conductivity resulting from the Hall-effect are analyzed with 3-D edge-element to determine the properties of the semiconductor. Some useful curves are given and the procedure of determining the mobility and the carrier concentration of II-VI semiconductor with these curves is described.
Keywords :
Hall effect; II-VI semiconductors; carrier density; carrier mobility; electrical conductivity; finite element analysis; microwave measurement; 3D edge-element; Hall-effect measurement; II-VI semiconductor; carrier concentration; carrier mobility; contactless microwave techniques; scattering characteristics; tensor conductivity; Conductivity; Dielectric losses; Dielectric substrates; Electromagnetic scattering; Magnetic analysis; Magnetic field measurement; Microwave measurements; Microwave theory and techniques; Particle scattering; Tensile stress;
Conference_Titel :
Microwave Photonics, 1996. MWP '96. Technical Digest., 1996 Internatonal Topical Meeting on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-3129-X
DOI :
10.1109/MWP.1996.662078
