Title :
Electromigration study on Cu-Sn interconnections
Author :
Lee, Tae-Kyu ; Hua, Fay ; Morris, J.W., Jr.
Author_Institution :
Dept. of Mater. Sci. & Eng., California Univ., Berkeley, CA, USA
Abstract :
This research concerns the influence of electron current on the diffusion of Sn and Cu in simple Cu-Sn and Cu-Sn-Cu diffusion couples. The diffusion couples are designed to permit in situ studies of the progress of diffusion. Initial tests were done in 60°C air with a current density of 1 × 104A/cm2. The results showed Cu movement into Sn in the direction of the electron current. With accompanying grain boundary sliding of the Sn grains. There is also evidence for Sn flow in the direction opposite the electron current.
Keywords :
copper alloys; current density; electromigration; integrated circuit interconnections; slip; tin alloys; 60 C; Cu-Sn interconnection; Cu-Sn-Cu; Sn flow; Sn grains; current density; diffusion couples; electromigration; electron current; grain boundary sliding; Current density; Electromigration; Grain boundaries; Heating; Optical microscopy; Scanning electron microscopy; Soldering; Temperature; Testing; Tin;
Conference_Titel :
Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Proceedings. International Symposium on
Print_ISBN :
0-7803-9085-7
Electronic_ISBN :
1550-5723
DOI :
10.1109/ISAPM.2005.1432046
