Title :
Unified Planar Process For Fabricating Heterojunction Bipolar Transistors And Buried Heterostructure Lasers Utilizing Impurity Induced Disordering
Author :
Thornton, R.L. ; Mosby, W.J. ; Chung, H.F.
Author_Institution :
Xerox Palo Alto Research Center
Keywords :
Contact resistance; Current-voltage characteristics; Doping; Epitaxial layers; Heterojunction bipolar transistors; Optical pulses; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1988. Conference Proceedings. LEOS '88.
DOI :
10.1109/LEOS.1988.689755
