• DocumentCode
    3219835
  • Title

    Unified Planar Process For Fabricating Heterojunction Bipolar Transistors And Buried Heterostructure Lasers Utilizing Impurity Induced Disordering

  • Author

    Thornton, R.L. ; Mosby, W.J. ; Chung, H.F.

  • Author_Institution
    Xerox Palo Alto Research Center
  • fYear
    1988
  • fDate
    2-4 Nov 1988
  • Firstpage
    29
  • Lastpage
    30
  • Keywords
    Contact resistance; Current-voltage characteristics; Doping; Epitaxial layers; Heterojunction bipolar transistors; Optical pulses; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1988. Conference Proceedings. LEOS '88.
  • Type

    conf

  • DOI
    10.1109/LEOS.1988.689755
  • Filename
    689755
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3219835