DocumentCode
321991
Title
High current modulation in optically controlled MOSFET using directly-bonded SiO/sub 2/-InP
Author
Yamagata, T. ; Sakai, T. ; Sakata, K. ; Shimomura, K.
Author_Institution
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan
fYear
1996
fDate
5-5 Dec. 1996
Firstpage
173
Lastpage
176
Abstract
High current modulation in an optically controlled MOSFET has been obtained. The structure of the device was composed of the absorption region of pin photo diode and the MOSFET region bonded by using SiO/sub 2/-InP direct wafer bonding technique. When the laser light with a wavelength of 1.50 /spl mu/m was irradiated to the absorption region, more than 550 /spl mu/A of drain-to-source current modulation and a maximum responsivity of more than 280 A/W was obtained.
Keywords
III-V semiconductors; MOSFET; indium compounds; p-i-n photodiodes; phototransistors; silicon compounds; wafer bonding; 1.50 micron; SiO/sub 2/-InP; SiO/sub 2/-InP direct wafer bonding; current modulation; optically controlled MOSFET; pin photodiode; responsivity; Absorption; FETs; MOSFET circuits; Optical control; Optical devices; Optical interconnections; Optical modulation; Polyimides; Voltage; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Photonics, 1996. MWP '96. Technical Digest., 1996 Internatonal Topical Meeting on
Conference_Location
Kyoto, Japan
Print_ISBN
0-7803-3129-X
Type
conf
DOI
10.1109/MWP.1996.662108
Filename
662108
Link To Document