A 1W, 900MHz class-F RF power amplifier with 56% PAE in 0.18-um CMOS technology

Author

Javidan, Javad ; Torkzadeh, Pooya ; Atarodi, Mojtaba

Author_Institution

EE Dept., Sharif U. of T., Tehran, Iran

fYear

2008

fDate

14-17 Dec. 2008

Firstpage

90

Lastpage

93

Abstract

The poor passive devices in a CMOS process and low breakdown oxide voltage of CMOS power transistor are major challenging issues in design and implementation of high power PAs, specially in deep sub-micron CMOS technology. In order to alleviate these problems, a thick oxide cascode CMOS PA with new matching network configuration is presented. The designed power amplifier exhibits a power-added efficiency (PAE) of 56% at the output frequency band of 900 MHz and maximum power of 29.8 dBm. The designed PA is implemented in Agilent ADS environment using 0.18 um TSMC CMOS technology.

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; passive networks; CMOS technology; class-F RF power amplifier; efficiency 56 percent; frequency 900 MHz; matching network configuration; power 1 W; size 0.18 mum; thick oxide cascode CMOS power amplifier; CMOS process; CMOS technology; Frequency shift keying; High power amplifiers; Inductors; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Voltage; Class-F; High Power; Poor Passive Devices; Power Amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2008. ICM 2008. International Conference on

Conference_Location

Sharjah

Print_ISBN

978-1-4244-2369-9

Electronic_ISBN

978-1-4244-2370-5

Type

conf

DOI

10.1109/ICM.2008.5393846

Filename

5393846