DocumentCode :
3220081
Title :
Surface-conduction electron emission from W-Mo-Si thin film
Author :
Lu Liu ; Siliang Xiong ; Lingguo Zhao ; Shengli Wu
Author_Institution :
Key Lab. for Phys. Electron. & Devices of the Minist. of Educ., Xi´an Jiaotong Univ., Xi´an, China
fYear :
2010
fDate :
14-16 Oct. 2010
Firstpage :
190
Lastpage :
192
Abstract :
This investigation proposes to deposit a ternary material W-Mo-Si as the conductive films for surface-conduction electron emitters. The components of this ternary film can be controlled by changing the sputtering targets and adjusting the sputtering power of the different targets. This study mainly analyses the electron emission of the co-sputtering using a W-Mo-Si target and Mo target. The micro-analysis about the W-Mo-Si film structure after the electro-forming process is carried out with SEM. Results show that there are many anomalous nanoparticles, electrons can tunnel between the nanoparticles and then be attracted by the anode voltage as the emission current.
Keywords :
electroforming; electron emission; molybdenum; silicon; sputter deposition; surface conductivity; thin films; tungsten; work function; SEM; W-Mo-Si; W-Mo-Si film structure; anode voltage; anomalous nanoparticles; conductive films; cosputtering; electroforming process; electron tunneling; emission current; micro-analysis; sputtering power; sputtering targets; surface-conduction electron emission; ternary material; thin film; work function; Cathodes; Films; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
Type :
conf
DOI :
10.1109/IVESC.2010.5644392
Filename :
5644392
Link To Document :
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