Title :
Low voltage highly linear tunable BiCMOS OTA using parasitic vertical bipolar transistor in CMOS technology
Author :
Hamed, Hesham F A
Author_Institution :
Electr. Eng. Depart., El-Minia Univ., El-Minia, Egypt
Abstract :
A low distortion low voltage BiCMOS tunable OTA with a very wide transconductance (gm) adjustment , and a wide input range is presented. Input transconductance transistors operate in triode region. The main feature of the proposed BiCMOS OTA are, it can operate at low voltage single supply 1.8 V, gm tuned linearly with a tunable voltage for a wide range (0 V to 1 V). Total harmonic distortion (THD) is less than -43 dB for input voltage 0.8 Vpp and frequency 50 KHz, and the OTA can be implemented in BiCMOS technology or standard CMOS technology using a vertical bipolar transistor. The OTA simulated using PSPICE program and 0.18 ¿m CMOS technology.
Keywords :
BiCMOS analogue integrated circuits; CMOS analogue integrated circuits; SPICE; bipolar transistors; circuit tuning; low-power electronics; operational amplifiers; BiCMOS technology; CMOS technology; PSPICE program; frequency 50 kHz; input transconductance transistors; low voltage highly linear tunable BiCMOS OTA; low voltage single supply; operational transconductance amplifiers; parasitic vertical bipolar transistor; size 0.18 mum; standard CMOS technology; total harmonic distortion; triode region; tunable voltage; voltage 0 V to 1 V; voltage 1.8 V; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Harmonic distortion; Linearity; Low voltage; MOSFET circuits; Microelectronics; Transconductance; Virtual colonoscopy; BiCMOS Circuits; Low Voltage Analog circuits; Parasitic Vertical BJT; Tunable OTAs;
Conference_Titel :
Microelectronics, 2008. ICM 2008. International Conference on
Conference_Location :
Sharjah
Print_ISBN :
978-1-4244-2369-9
Electronic_ISBN :
978-1-4244-2370-5
DOI :
10.1109/ICM.2008.5393853
