DocumentCode :
3220342
Title :
Photoresist technology: a view of the future
Author :
Wilson, Christopher G.
Author_Institution :
Dept. of Chem. Eng., Texas Univ., Austin, TX, USA
fYear :
1999
fDate :
6-8 July 1999
Firstpage :
4
Abstract :
Summary form only given. Resolution limits in microlithography are primarily the result of an inability to generate adequate image contrast or modulation in exposure systems with acceptable throughput. However, there are instances in which resist chemistry has limited production capability in the past and it may do so again. Ultimately, it may be necessary to explore changes to the design of chemically amplified resists because of intrinsic (or isofocal) bias limitations. There is a mounting body of evidence that suggests that the intrinsic bias in classical acid catalyzed systems may be too large to allow controlled imaging below about 30-40 nm. The implications of these studies will be discussed.
Keywords :
photoresists; technological forecasting; acid catalyzed system; chemically amplified resist; future developments; microlithography; photoresist technology; Chemical engineering; Chemical technology; Chemistry; Etching; Image generation; Image resolution; Lithography; Resists; Throughput;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location :
Yokohama, Japan
Print_ISBN :
4-930813-97-2
Type :
conf
DOI :
10.1109/IMNC.1999.797448
Filename :
797448
Link To Document :
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