Title :
Self-organized formation of widegap II-VI quantum structures and their optical properties
Author_Institution :
Inst. of Mater. Res., Tohoku Univ., Sendai, Japan
Abstract :
Widegap II-VI materials are characterized by the direct bandgap with either Zinc Blend or Wurtzite structures. They have relatively large exciton binding energy and electron-phonon coupling. Those characteristics make the materials very attractive both from scientific points of views and optical device application aspects. The purpose of this talk is to introduce the fabrication of quantum structures of widegap II-VI materials and their optical properties. The materials system we will discuss includes (1) ZnSe quantum structures embedded in ZnS, (2) Mn-doped ZnSe quantum structures embedded in ZnS, (3) CdSe quantum dots on ZnSe, and (4) ZnO quantum dots.
Keywords :
II-VI semiconductors; photoluminescence; semiconductor quantum dots; wide band gap semiconductors; CdSe; ZnO; ZnS; ZnSe; ZnSe:Mn; optical properties; quantum dot; self-organized fabrication; widegap II-VI quantum structure; Excitons; Impurities; Luminescence; Optical devices; Optical materials; Photonic band gap; Quantum dots; Stimulated emission; Zinc compounds; Zinc oxide;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location :
Yokohama, Japan
Print_ISBN :
4-930813-97-2
DOI :
10.1109/IMNC.1999.797455
