• DocumentCode
    3220469
  • Title

    Manipulations of densities and sizes during self-assembling quantum dots in MOVPE

  • Author

    Seifert, W. ; Johansson, J. ; Carlsson, N.

  • Author_Institution
    Solid State Phys. & Nanometer Structure Consortium, Lund Univ., Sweden
  • fYear
    1999
  • fDate
    6-8 July 1999
  • Firstpage
    20
  • Lastpage
    21
  • Abstract
    Quantum dot structures in the form of coherent 3-dimensional islands can be grown in-situ by "self-assembling". The specifics of self assembling is that strain in a critically thick 2-dimensional wetting layer acts as the driving force for a transition towards an energetically favoured 2-dimensional (wetting)+ 3-dimensional (island) Stranski-Krastanow morphology. The initiation mechanism of the 2D-3D transition is a nucleation step, followed by growth and reorganization of material (redistribution of material from the wetting layer, ripening processes). As a consequence, for a given misfit between substrate and epilayer, densities and sizes of self-assembled 3D islands are mostly affected by the actual deposition conditions. In the following we will show to which extent densities and sizes of 3D islands deliberately can be manipulated by varying the deposition parameters Q (deposited amount), T (deposition temperature) and R (deposition rate). The chosen materials system for
  • Keywords
    III-V semiconductors; MOCVD coatings; gallium arsenide; gallium compounds; indium compounds; self-assembly; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; 2D-3D transition; InP on Ga/sub 0.5/In/sub 0.5/P/GaAs[001]; InP-Ga/sub 0.5/In/sub 0.5/P-GaAs; MOVPE; Stranski-Krastanow morphology; coherent 3-dimensional islands; critically thick 2-dimensional wetting layer; densities; deposited amount; deposition parameters; deposition rate; deposition temperature; driving force; growth; nucleation step; quantum dot structures; reorganization of material; ripening processes; self-assembling; self-assembling quantum dots; sizes; strain; wetting layer; Cooling; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium phosphide; Quantum dots; Self-assembly; Size measurement; Temperature; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
  • Conference_Location
    Yokohama, Japan
  • Print_ISBN
    4-930813-97-2
  • Type

    conf

  • DOI
    10.1109/IMNC.1999.797456
  • Filename
    797456