GaAs photonic crystals on SiO/sub 2/ fabricated by VHF anode-coupled RIE and wafer bonding

Semiconductor photonic crystals (PCs) are attracting much attention from the viewpoints of both physical interest and optoelectronic applications that take advantage of controlling optical transitions. In order to make crystals with the photonic band-gaps in the optical wavelength region, it is required to fabricate well-defined periodic structures on the order of the wavelength of light. Furthermore, a confinement structure in the vertical direction is also important in the 2-dimensional (2D) PCs. We have fabricated GaAs 2D PCs on SiO/sub 2/ which are suitable for waveguide applications in the lateral directions.