DocumentCode :
3220590
Title :
Spatial distribution of mask-scattered electrons through scattering stencil mask
Author :
Yamashita, H. ; Manako, S. ; Nomura, E. ; Nakajima, K. ; Nozue, H.
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
fYear :
1999
fDate :
6-8 July 1999
Firstpage :
30
Lastpage :
31
Abstract :
Electron-beam (EB) projection methods, such as SCALPEL and PREVAIL are among the candidates for next generation lithography. In these methods, EB masks are used to gain high throughput of the exposure systems. Absorber or scatterer combining with opening or membrane of those masks are structured to produce an image contrast on the wafer.
Keywords :
electron beam lithography; electron resists; PREVAIL; SCALPEL; electron-beam projection methods; high throughput; image contrast; mask-scattered electrons; next generation lithography; scattering stencil mask; spatial distribution; Biomembranes; Computational modeling; Electron beams; Laboratories; Lithography; National electric code; Proximity effect; Resists; Scattering; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location :
Yokohama, Japan
Print_ISBN :
4-930813-97-2
Type :
conf
DOI :
10.1109/IMNC.1999.797461
Filename :
797461
Link To Document :
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