DocumentCode
3220616
Title
GaAs Fets And Novel Heterloepitaxial Quaternary Lasers Grown On InP Substrates By Organometallic Chemical Vapor Deposition
Author
Lo, Y.H. ; Bhat, Ritesh ; Chang-Hasnain, Constance ; Caneau, Catherine ; Zah, C.E. ; Lee, T.P.
Author_Institution
Bell Communications Research, Inc.
fYear
1988
fDate
2-4 Nov. 1988
Firstpage
44
Lastpage
46
Keywords
Channel hot electron injection; Chemical lasers; Chemical vapor deposition; FETs; Frequency; Gallium arsenide; Indium phosphide; MESFETs; Substrates; Superlattices;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1988. Conference Proceedings. LEOS '88.
Conference_Location
Santa Clara, CA, USA
Type
conf
DOI
10.1109/LEOS.1988.689759
Filename
689759
Link To Document