DocumentCode :
3220616
Title :
GaAs Fets And Novel Heterloepitaxial Quaternary Lasers Grown On InP Substrates By Organometallic Chemical Vapor Deposition
Author :
Lo, Y.H. ; Bhat, Ritesh ; Chang-Hasnain, Constance ; Caneau, Catherine ; Zah, C.E. ; Lee, T.P.
Author_Institution :
Bell Communications Research, Inc.
fYear :
1988
fDate :
2-4 Nov. 1988
Firstpage :
44
Lastpage :
46
Keywords :
Channel hot electron injection; Chemical lasers; Chemical vapor deposition; FETs; Frequency; Gallium arsenide; Indium phosphide; MESFETs; Substrates; Superlattices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1988. Conference Proceedings. LEOS '88.
Conference_Location :
Santa Clara, CA, USA
Type :
conf
DOI :
10.1109/LEOS.1988.689759
Filename :
689759
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3220616
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