Title :
Dielectric properties in MIS capacitor irradiated under Co-60 gamma ray
Author :
Ryu, B.H. ; Lim, K.J. ; Moon, S.I. ; Kim, B.H.
Author_Institution :
Dept. of Electr. Eng., Hanyang Univ., Seoul, South Korea
Abstract :
The characteristics of capacitance vs. bias and dissipation factor vs. bias in an irradiated MOS capacitor are examined. Experimental results indicate that the peak of the dissipation factor is not only due to the interaction between interface states and majority carriers, but also to the interaction between the space charge formed in the vicinity of the silicon-silicon-dioxide interface and the majority carriers. Measurement of dissipation factor was found to be a useful tool for evaluating radiation effects in MOS capacitors
Keywords :
capacitance; capacitors; dielectric properties of solids; elemental semiconductors; gamma-ray effects; interface electron states; semiconductor-insulator boundaries; silicon; silicon compounds; space charge; 60Co; MIS capacitor; Si-SiO2; bias; capacitance; dissipation factor; gamma ray; interface states; irradiated MOS capacitor; majority carriers; radiation effects; space charge; Capacitance; Capacitance-voltage characteristics; Capacitors; Dielectrics; Electric variables measurement; Electron traps; Frequency measurement; Interface states; Space charge; Voltage;
Conference_Titel :
Conduction and Breakdown in Solid Dielectrics, 1992., Proceedings of the 4th International Conference on
Conference_Location :
Sestri Levante
Print_ISBN :
0-7803-0129-3
DOI :
10.1109/ICSD.1992.224994
