Title :
Novel dual working organic bottom anti-reflective coating for 193, 248 nm lithography
Author :
Jung, Min-Ho ; Hong, Sung-Eun ; Kim, Jong-Kook ; Kim, Jin-Soo ; Jung, Jae-Chang ; Lee, Geunsu ; Kim, Hyeong-Soo ; Baik, Ki-Ho ; Choi, Il-Hyun
Author_Institution :
Semicond. Adv. Res. Div., Hyundai Electron. Ind. Co. Ltd., Kyungki, South Korea
Abstract :
In the lithographic processing, application of a bottom anti-reflective coating (BARC) has proven to provide a number of benefits, such as elimination of reflective notching generated by reflections from highly reflective substrates, reduced swing effects caused by thin film interference, and therefore improved line-width control. To achieve such benefits, the organic BARC materials should have strong absorption at the exposure wavelength, high etch rate and matching to commercial chemically amplified resist. In design concept, the formulation of organic BARC material requires a minimum of two functional parts i.e., a chromophore to control the reflection and a cross-linking part to avoid intermixing with resist cast on it. In this paper, we report the performance of new organic BARC materials designed to work for lithographic applications at 248 nm as well as 193 nm simultaneously.
Keywords :
antireflection coatings; organic compounds; photoresists; ultraviolet lithography; 193 nm; 248 nm; DUV lithography; chemically amplified resist; chromophore; cross-linking structure; organic bottom antireflective coating; Absorption; Coatings; Etching; Interference elimination; Organic chemicals; Organic materials; Reflection; Resists; Substrates; Transistors;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location :
Yokohama, Japan
Print_ISBN :
4-930813-97-2
DOI :
10.1109/IMNC.1999.797485