Sub-0.10 um hole fabrication using bi-layer silylation process for 193 nm lithography

The silylation process is a key technology to extend the photolithography dimensions down to 0.10 um or smaller using a 193 nm or shorter wavelength. We have been evaluating a bi-layer silylation process as one approach to improve the lithographic performance of the silylation process. In this report, we describe a new biasing technique for the sub-0.10 um hole fabrication using a bi-layer silylation process.