Power fast modulator thyristors

Author

Brylevsky, V.I. ; Efanov, V.M. ; Kardo-Sysoev, A.F. ; Smirnova, I.A. ; Tchashnicov, I.G.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

fYear

1996

fDate

25-27 Jun 1996

Firstpage

39

Lastpage

42

Abstract

Fast power silicon thyristors are very promising for power modulators, but they have some drawbacks preventing their wide use. The main drawbacks are: instability of uniform current distribution which could lead to current localization (filamentation of current) and to burnout of the device under high currents; turn on time depends on the thickness of base layers and as well on maximum voltage. High voltage thyristors have longer turn on times. So to turn on high voltage during short time it is necessary to connect many low voltage fast devices in series. In this case the main question, which should be answered is on how to synchronize all thyristors. The objective of the paper is to show how to overcome these drawbacks

Keywords

current distribution; power supplies to apparatus; pulsed power switches; synchronisation; thyristor applications; thyristors; Si; base layer thickness; current localization; device burnout; fast power silicon thyristors; high voltage thyristors; power fast modulator thyristors; series connected devices; thyristors synchronisation; uniform current distribution instability; Anodes; Current density; Current distribution; Doping; Fingers; Instruction sets; Shape; Silicon; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Modulator Symposium, 1996., Twenty-Second International

Conference_Location

Boca Raton, FL

Print_ISBN

0-7803-3076-5

Type

conf

DOI

10.1109/MODSYM.1996.564444

Filename

564444