• DocumentCode
    3221108
  • Title

    Chemically amplified electron beam positive resist with acetal protecting group

  • Author

    Saito, Satoshi ; Kihara, Naoko ; Ushirogouchi, Tohru ; Nakasugi, Tetsuro

  • Author_Institution
    Mater. & Devices Res. Lab., Toshiba Corp., Kawasaki, Japan
  • fYear
    1999
  • fDate
    6-8 July 1999
  • Firstpage
    82
  • Lastpage
    83
  • Abstract
    In this paper, we discuss about the chemically amplified EB positive resist based on acetal-protected Poly(hydroxystyrene) (PHS) and investigate the influence of the photo-acid generator to resist performance.
  • Keywords
    electron resists; polymer films; PHS; acetal protecting group; chemically amplified electron beam positive resist; photo-acid generator; poly(hydroxystyrene); Chemicals; Electron beams; Fabrication; Laboratories; Polymers; Protection; Random access memory; Resists; Ultra large scale integration; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
  • Conference_Location
    Yokohama, Japan
  • Print_ISBN
    4-930813-97-2
  • Type

    conf

  • DOI
    10.1109/IMNC.1999.797487
  • Filename
    797487
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3221108