Spin dependent tunneling and interface characterization in epitaxial Fe/MgO/Fe magnetic tunnel junctions

Author

Wang, S.G. ; Ma, Q.L. ; Liu, H.F. ; Han, X.F. ; Ward, R.C.C. ; Zhang, Xiaobing

Author_Institution

State Key Lab. of Magn., Chinese Acad. of Sci., Beijing, China

fYear

2010

fDate

14-16 Oct. 2010

Firstpage

133

Lastpage

134

Abstract

This paper presents huge tunnel magnetoresistance (TMR) effect in epitaxial Fe/MgO/Fe magnetic tunnel junctions (MTJs) at room temperature predicted by first-principle theory. Surface X-ray diffraction, Auger electron spectroscopy, X-ray absorption spectra, and X-ray magnetic circular dichroism is used for interface characterization. The interfacial structure plays a crucial role on coherent tunneling in epitaxial MgO-based MTJs grown by molecular beam epitaxy.

Keywords

Auger electron spectra; X-ray absorption spectra; X-ray diffraction; interface magnetism; interface structure; iron; magnesium compounds; magnetic circular dichroism; magnetic epitaxial layers; molecular beam epitaxial growth; tunnelling magnetoresistance; Auger electron spectroscopy; Fe-MgO-Fe; X-ray absorption spectra; X-ray magnetic circular dichroism; epitaxial magnetic tunnel junctions; first-principle theory; interface characterization; interfacial structure; molecular beam epitaxy; spin dependent tunneling; surface X-ray diffraction; temperature 293 K to 298 K; tunnel magnetoresistance effect; Epitaxial growth; Iron; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International

Conference_Location

Nanjing

Print_ISBN

978-1-4244-6645-0

Type

conf

DOI

10.1109/IVESC.2010.5644441

Filename

5644441