Title :
Spin dependent tunneling and interface characterization in epitaxial Fe/MgO/Fe magnetic tunnel junctions
Author :
Wang, S.G. ; Ma, Q.L. ; Liu, H.F. ; Han, X.F. ; Ward, R.C.C. ; Zhang, Xiaobing
Author_Institution :
State Key Lab. of Magn., Chinese Acad. of Sci., Beijing, China
Abstract :
This paper presents huge tunnel magnetoresistance (TMR) effect in epitaxial Fe/MgO/Fe magnetic tunnel junctions (MTJs) at room temperature predicted by first-principle theory. Surface X-ray diffraction, Auger electron spectroscopy, X-ray absorption spectra, and X-ray magnetic circular dichroism is used for interface characterization. The interfacial structure plays a crucial role on coherent tunneling in epitaxial MgO-based MTJs grown by molecular beam epitaxy.
Keywords :
Auger electron spectra; X-ray absorption spectra; X-ray diffraction; interface magnetism; interface structure; iron; magnesium compounds; magnetic circular dichroism; magnetic epitaxial layers; molecular beam epitaxial growth; tunnelling magnetoresistance; Auger electron spectroscopy; Fe-MgO-Fe; X-ray absorption spectra; X-ray magnetic circular dichroism; epitaxial magnetic tunnel junctions; first-principle theory; interface characterization; interfacial structure; molecular beam epitaxy; spin dependent tunneling; surface X-ray diffraction; temperature 293 K to 298 K; tunnel magnetoresistance effect; Epitaxial growth; Iron; Semiconductor process modeling;
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
DOI :
10.1109/IVESC.2010.5644441
