Title :
Self-assembling of silicon quantum dots and its application to floating gate memory
Author :
Miyazaki, S. ; Murakami, H. ; Ikeda, M. ; Yoshida, E. ; Kohno, A. ; Hirose, M.
Author_Institution :
Dept. of Electr. Eng., Hiroshima Univ., Japan
Abstract :
In this paper, we describe a formation mechanism of nanometer Si dots on thermally-grown SiO/sub 2/ during LPCVD using SiH/sub 4/. And also, for MOS devices with nanometer Si dots as a floating gate, we demonstrate the memory operation due to electron charging to the dots at room temperature.
Keywords :
MIS devices; chemical vapour deposition; elemental semiconductors; nanotechnology; quantum well devices; self-assembly; semiconductor quantum dots; semiconductor storage; silicon; LPCVD; MOS device; Si; SiO/sub 2/; SiO/sub 2/ ultrathin film; floating gate memory; nanofabrication; self-assembly; silicon quantum dot; Electrons; Nanoscale devices; Nonvolatile memory; Quantum dots; Self-assembly; Silicon; Surface treatment; Thermal decomposition; US Department of Transportation; Voltage;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location :
Yokohama, Japan
Print_ISBN :
4-930813-97-2
DOI :
10.1109/IMNC.1999.797488
