DocumentCode :
3221296
Title :
A compact lightweight 125 mm thyristor for pulse power applications
Author :
Podlesak, T.F. ; Singh, H. ; Behr, S. ; Schneider, S.
Author_Institution :
US Army Res. Lab., Fort Monmouth, NJ, USA
fYear :
1996
fDate :
25-27 Jun 1996
Firstpage :
43
Lastpage :
46
Abstract :
A compact, lightweight, symmetric 125 mm diameter silicon thyristor is under development by SPCO for high current millisecond pulse power applications, i.e. electric launchers. This thyristor has a drastically reduced size and weight. This is due to a new design which eliminates the need for large, heavy refractory metal substrates and endpieces, employs an alloyed anode interface for high surge currents, and a high integrity plastic disk package. The package is less than one-fifth the volume and weight of a package utilizing standard construction technology, and provides for double sided cooling and a lower thermal resistance from junction to sink of 0.0033 K/W. Exploratory testing has been performed at ARL using a 10 milliohm, 0.5 ms (FWHM) PFN. With a matched load the pulser at 4 kV can provide peak currents of 200 kA with a di/dt in excess of 1 kA/μs. Initial results on the temporal behaviour as a function of operating levels under matched load conditions are presented. A computer simulation of the behaviour of the device using the actual current pulse shape was consistent with the experimental results. The present six star gate design does not provide the rate of plasma spreading required for 200 kA operation. A computer model using an involute gate structure indicates that the peak current objectives are achievable. The development of this switch will permit the construction of compact, lightweight high voltage series switch stacks for electric guns
Keywords :
anodes; cooling; elemental semiconductors; heat sinks; power supplies to apparatus; pulsed power technology; railguns; semiconductor device packaging; silicon; thermal resistance; thyristor applications; 0.5 ms; 10 mohm; 125 mm; 200 kA; 4 kV; Si; alloyed anode interface; computer model; computer simulation; current pulse shape; double sided cooling; electric guns; electric launchers; high integrity plastic disk package; high surge currents; high voltage series switch stacks; involute gate structure; lower thermal resistance; matched load; matched load conditions; peak current objectives; peak currents; pulse power applications; silicon thyristor; thyristor; Anodes; Cooling; Optical refraction; Plastic packaging; Silicon; Surges; Switches; Testing; Thermal resistance; Thyristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Modulator Symposium, 1996., Twenty-Second International
Conference_Location :
Boca Raton, FL
Print_ISBN :
0-7803-3076-5
Type :
conf
DOI :
10.1109/MODSYM.1996.564445
Filename :
564445
Link To Document :
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