Title :
Langasite crystal quality improvement aimed at high-Q resonator fabrication
Author :
Gotalskaja, A.N. ; Dresin, D.I. ; Schegolkova, S.N. ; Saveleva, N.I. ; Bezdelkin, V.V. ; Cherpoukhina, G.N.
Author_Institution :
LANTAN Co. Ltd., Moscow
fDate :
31 May-2 Jun 1995
Abstract :
Processes of langasite crystal growth are considered. Heat assembly design, pulling and rotation rates are optimized. Composition of charge, impurity content and technology of its manufacture have been studied. Influence of annealing regimes on crystal quality are discussed. Design and technology investigations of langasite resonators for crystal material quality factor evaluation is reported. Langasite resonator at 5 MHz, 3rd overtone has been developed
Keywords :
Q-factor; annealing; crystal growth from melt; crystal resonators; gallium compounds; lanthanum compounds; piezoelectric materials; silicon compounds; 5 MHz; La3Ga5SiO14; annealing regimes; crystal growth; crystal quality improvement; heat assembly design; high-Q resonator fabrication; impurity content; langasite; pulling rates; rotation rates; third overtone; Annealing; Assembly; Crystalline materials; Crystallization; Crystals; Design optimization; Electromagnetic wave absorption; Fabrication; Impurities; Lanthanum;
Conference_Titel :
Frequency Control Symposium, 1995. 49th., Proceedings of the 1995 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2500-1
DOI :
10.1109/FREQ.1995.484069
