On the permanent components of negative bias temperature instability

We have analyzed NBTI-induced interface-trap (ΔN_it) and border-trap (ΔN_bt) creation with respect to NBTI stress conditions using on the fly oxide trap (OTFOT) method. These type of traps are both NBTI permanent components. We have found that the exponent, n of ΔN_it tends to saturate with stress temperature. However ΔN_bt shows an opposite behavior. Also, ΔN_bt/ΔN_it ratio have revealed that ΔN_it dominates at lower stress conditions, followed later by ΔN_bt domination at higher stress conditions. The saturation value depends on temperature and electric field. Such behavior of NBTI-induced permanent components seems to progress from the interface to the interfacial sub-oxide region.