DocumentCode
3221440
Title
Automated on-line optimization of an epitaxial process
Author
Sachs, Emanuel ; Ha, Sungdo ; Hu, Albert ; Metz, Walter
Author_Institution
MIT, Cambridge, MA, USA
fYear
1990
fDate
21-23 May 1990
Firstpage
92
Lastpage
97
Abstract
As part of a system for process control, the run by run controller implements a form of adaptive control based on the sequential design of experiments. The run by run controller can be applied to the local optimization, feedback control, and feedforward control or processes in which multiple inputs control multiple output characteristics. Current work concerns the application of the controller to the optimization and control of thickness and resistivity uniformity of silicon epitaxy. Initial experiments to investigate the effect of noise and disturbances on an AME 7800 barrel reactor indicate that the system is a good candidate for modeling and control using the multiple response surface method, wherein each measured site is separately modeled with a response surface and the uniformity metric is calculated from these models
Keywords
adaptive control; elemental semiconductors; epitaxial growth; process computer control; semiconductor growth; silicon; AME 7800 barrel reactor; Si epitaxial growth; adaptive control; epitaxial process; feedback control; feedforward control or processes; local optimization; multiple input multiple output; multiple response surface method; on-line optimization; resistivity uniformity control; run by run controller; sequential design of experiments; thickness uniformity control; uniformity metric; Adaptive control; Automatic control; Conductivity; Control systems; Feedback control; Process control; Response surface methodology; Semiconductor process modeling; Silicon; Thickness control;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Science Symposium, 1990. ISMSS 1990., IEEE/SEMI International
Conference_Location
Burlingame, CA
Type
conf
DOI
10.1109/ISMSS.1990.66116
Filename
66116
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