Title :
The growth process and field emission characteristics of globe-like polycrystalline diamond films
Author :
Lu, Z.L. ; Zhang, Leiqi ; Ma, X.T. ; Yao, Ning ; Zhang, B.L.
Author_Institution :
Sch. of Mater. Sci. & Eng., Zhengzhou Univ., Zhengzhou, China
Abstract :
This paper presents the growth process and field-emission(FE) characteristics of globe-like polycrystalline diamond films grown on titanium coated Si substrates by microwave plasma chemical vapor deposition. Scanning electron microscopy (SEM) and Raman scattering spectroscopy are utilized to characterize the morphology and microstructure. The macroscopic FE current-voltage(I-V) curve is measured by diode structure. Microscopic characteristics and local FE measurements are studied by scanning tunneling microscope (STM) in a vacuum of below 10-8 Pa. The turn-on field of the film deposited at 2h is 0.92V/μm and the current density is 0.62mA/cm at the electric field of 2V/μm.
Keywords :
Raman spectra; current density; diamond; field emission; plasma CVD; scanning electron microscopy; scanning tunnelling microscopy; thin films; C; Raman scattering spectroscopy; SEM; STM; Ti-Si; current density; field emission characteristics; globe-like polycrystalline diamond films; growth process; macroscopic field emission current-voltage curve; microwave plasma chemical vapor deposition; scanning electron microscopy; scanning tunneling microscopy; time 2 h; titanium coated Si substrates;
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
DOI :
10.1109/IVESC.2010.5644459
