Title :
Monolithic mixers with MESFET technology to up and down convert between C and V band
Author :
Torres, Juan P. ; Fortes, F. ; Rosario, M.J. ; Dieudonne, J.M. ; Costa Freire, J.
Author_Institution :
Inst. de Telecomunicacoes, Inst. Superior Tecnico, Lisbon, Portugal
Abstract :
In this paper the design of singly balanced mixers to convert C to V hand signals are presented. A step by step design technique is described, based on harmonic balance simulations. The mixer devices are Schottky diodes compatible with a GaAs MESFET technology. The mixer was optimised for minimum conversion losses on the widest possible bandwidth when used as an up or downconverter in order to be used on a large number of applications. The experiments show a minimum conversion losses on the range of 6 to 8 dB for both applications (up and downconverter) and a 3 dB bandwidth larger then 6 GHz.<>
Keywords :
III-V semiconductors; MESFET integrated circuits; Schottky diode mixers; circuit analysis computing; field effect MIMIC; gallium arsenide; impedance matching; integrated circuit design; millimetre wave frequency convertors; millimetre wave mixers; transceivers; 6 to 8 dB; C band; GaAs; MESFET technology; Schottky diodes; V band; down conversion; harmonic balance simulations; minimum conversion losses; monolithic mixers; singly balanced mixers; up conversion; Bandwidth; Circuit testing; Coupling circuits; Diodes; Gallium arsenide; Impedance; MESFETs; Mixers; Radio frequency; Topology;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406081
