DocumentCode :
3221582
Title :
Non-Langevin recombination in disordered dielectrics
Author :
Arkhipov, V.I.
Author_Institution :
Moscow Eng. Phys. Inst.
fYear :
1992
fDate :
22-25 Jun 1992
Firstpage :
559
Abstract :
Summary form only given. Negative transient RIC (radiation-induced conductivity) in short-circuited samples and nonmonotonic increase of radiation-induced space-charge density have recently been observed for polymers (low-density polyethylene, polytetrafluoroethylene) and inorganic dielectrics (MgO, CaF2, AlN, LiNiO3). These experimental data are analyzed, and it is shown that such a behavior of RIC and space-charge density can be caused by non-Langevin recombination with the recombination constant R smaller than the Langevin value Ro. Possible mechanisms of recombination rate reduction have been considered
Keywords :
electron-hole recombination; radiation effects; space charge; AlN; CaF2; LiNiO3; MgO; disordered dielectrics; electron-hole recombination; inorganic dielectrics; low-density polyethylene; negative transient radiation-induced conductivity; nonLangevin recombination; polymers; polytetrafluoroethylene; recombination rate reduction; short-circuited samples; space-charge density; Charge carrier density; Charge carrier processes; Conducting materials; Conductivity; Dielectric materials; Dispersion; Distributed power generation; Electrodes; Photoconducting materials; Spontaneous emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Conduction and Breakdown in Solid Dielectrics, 1992., Proceedings of the 4th International Conference on
Conference_Location :
Sestri Levante
Print_ISBN :
0-7803-0129-3
Type :
conf
DOI :
10.1109/ICSD.1992.225030
Filename :
225030
Link To Document :
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