Charge storage and transport in dielectrics with negative correlation energy traps

Summary form only given. A number of dielectric materials contain traps with negative correlation energy. A model of charge accumulation and decay that takes into account the capture of charge carriers by such traps, leading to the formation of neutral one-electron D₀ states and the subsequent tunnel interaction of these states according to the 2D₀→D₊+D_- reaction, is developed. It is shown that two possibilities exist for an electron injected into the dielectric: (1) to be captured by a deep trap (D₊ +e→D₀) and then reemitted into the conduction band, and (2) to be captured by another D₀ state. This leads to the observed long-lasting relaxation process. The results of calculations are in good agreement with experimental data obtained for silicon nitride films in strong electric fields