DocumentCode :
3221612
Title :
Observation of spin-dependent tunneling current using optically pumped GaAs microtip
Author :
Shinohara, R. ; Yamaguchi, K.
Author_Institution :
Dept. of Electron. Eng., Univ. of Electro-Commun., Chofu, Japan
fYear :
1999
fDate :
6-8 July 1999
Firstpage :
128
Lastpage :
129
Abstract :
The spin-polarized scanning tunneling microscope (SP-STM) using a photoexcited GaAs tip has been expected to observe magnetic domains and surface spin structures with atomic spatial resolution. Spin-polarized electrons can be generated in the GaAs conduction band by circularly polarized light pumping. We developed GaAs microtips and are trying to realize the SP-STM system. In this paper, we report the influence of surface states of the GaAs microtip on the spin-dependent tunneling current. This effect is very important to obtain high sensitivity in the SP-STM using a GaAs tip.
Keywords :
III-V semiconductors; electron spin polarisation; gallium arsenide; scanning tunnelling microscopy; surface states; GaAs; circularly polarized light pumping; optically pumped GaAs microtip; photoexcited GaAs tip; spin-dependent tunneling current; spin-polarized scanning tunneling microscope; surface states; Atom optics; Electron optics; Gallium arsenide; Magnetic domains; Magnetic force microscopy; Magnetic tunneling; Optical polarization; Optical pumping; Optical sensors; Spatial resolution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location :
Yokohama, Japan
Print_ISBN :
4-930813-97-2
Type :
conf
DOI :
10.1109/IMNC.1999.797510
Filename :
797510
Link To Document :
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