Title :
Fabrication of photonic crystals consisting of Si nanopillars by plasma etching using self-formed masks
Author :
Tada, Tetsuya ; Poborchii, Vladimir V. ; Kanayama, Toshihiko
Abstract :
We have fabricated 2D photonic crystals (square and triangular lattice) with a photonic band gap in the visible light range by periodically arranging Si nanopillars. The fabrication process uses iron clusters as nuclei for self-formation of etching masks to obtain high-aspect-ratio Si nanopillars. First, arrays of openings (30-40 nm in diameter) were defined in resist layers (PMMA) by electron beam patterning. Then iron was deposited with vacuum evaporation to a nominal thickness of 1-2 nm, resulting in cluster formation in the bottom of the openings. After removing the resist by dipping in acetone for 2 minutes, the substrates were ECR etched with SF/sub 6/. During the etching, reaction products in the plasma condense around the clusters, leading to the self-formation of uniform size etching masks. Then Si nanopillars with a high aspect ratio were fabricated. The iron clusters enable fabrication of the nanopillars with an aspect ratio higher than 20, probably owing to their catalytic properties.
Keywords :
elemental semiconductors; nanostructured materials; photonic band gap; scanning electron microscopy; silicon; sputter etching; PMMA resist layers; Si; Si nanopillars; electron beam patterning; photonic band gap; photonic crystals; plasma etching; self-formed masks; Electron beams; Etching; Fabrication; Iron; Lattices; Photonic band gap; Photonic crystals; Plasma applications; Plasma properties; Resists;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location :
Yokohama, Japan
Print_ISBN :
4-930813-97-2
DOI :
10.1109/IMNC.1999.797511