DocumentCode
3221661
Title
Lateral silicon field emission devices using electron beam lithography
Author
Hyungcheol Shin ; Sun-A Yang ; Taekeun Hwang ; Sangyeon Han ; Jongho Lee ; Yjong Duk Lee
Author_Institution
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
fYear
1999
fDate
6-8 July 1999
Firstpage
134
Lastpage
135
Abstract
For low voltage and high speed operation of field emission vacuum microelectronic devices, sharp cathode tips and minimal cathode to anode spacing are needed. In this work, lateral field emission diodes and triodes have been fabricated using high-resolution electron beam (EB) lithography in combination with reactive ion etching (RIE) techniques. The characteristics of the fabricated devices are presented.
Keywords
electron beam lithography; elemental semiconductors; semiconductor diodes; silicon; sputter etching; triodes; vacuum microelectronics; Si; electron beam lithography; field emission vacuum microelectronic devices; lateral field emission diodes; lateral field emission triodes; reactive ion etching; sharp cathode tips; Anodes; Cathodes; Crystallization; Diodes; Electrodes; Electron beams; Etching; Lithography; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location
Yokohama, Japan
Print_ISBN
4-930813-97-2
Type
conf
DOI
10.1109/IMNC.1999.797513
Filename
797513
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