Title :
Lateral silicon field emission devices using electron beam lithography
Author :
Hyungcheol Shin ; Sun-A Yang ; Taekeun Hwang ; Sangyeon Han ; Jongho Lee ; Yjong Duk Lee
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
For low voltage and high speed operation of field emission vacuum microelectronic devices, sharp cathode tips and minimal cathode to anode spacing are needed. In this work, lateral field emission diodes and triodes have been fabricated using high-resolution electron beam (EB) lithography in combination with reactive ion etching (RIE) techniques. The characteristics of the fabricated devices are presented.
Keywords :
electron beam lithography; elemental semiconductors; semiconductor diodes; silicon; sputter etching; triodes; vacuum microelectronics; Si; electron beam lithography; field emission vacuum microelectronic devices; lateral field emission diodes; lateral field emission triodes; reactive ion etching; sharp cathode tips; Anodes; Cathodes; Crystallization; Diodes; Electrodes; Electron beams; Etching; Lithography; Silicon; Voltage;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location :
Yokohama, Japan
Print_ISBN :
4-930813-97-2
DOI :
10.1109/IMNC.1999.797513
