Title :
Electrical characterization of air-bridge-structured silicon wires fabricated by micromachining of silicon-on-insulator substrate
Author :
Fujii, H. ; Kanemaru, S. ; Matsukawa, T. ; Itoh, J.
Author_Institution :
Kobe Steel Ltd., Hyogo, Japan
Abstract :
We have fabricated air-bridge-structured silicon wires by micromachining based on photolithography of an SOI substrate. The present devices have a 3D-tapered wire structure towards the center and were bridged in the air between two Si pads. The typical dimensions of the wires are 20-100 nm in width and about 30-100 nm in thickness. In this work, we characterized the electrical (I-V) properties of the wires in both vacuum and atmospheric ambient. The I-V characteristics exhibited a negative differential conductance and hysteresis at room temperature.
Keywords :
elemental semiconductors; micromachining; negative resistance; photolithography; silicon; silicon-on-insulator; 3D-tapered wire structure; I-V characteristics; Si; air-bridge-structure; hysteresis; micromachining; negative differential conductance; photolithography; silicon-on-insulator; Conductivity; Current measurement; Fabrication; Hysteresis; Impurities; Micromachining; Silicon on insulator technology; Steel; Voltage; Wires;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location :
Yokohama, Japan
Print_ISBN :
4-930813-97-2
DOI :
10.1109/IMNC.1999.797515
