Title :
The effect of mixing development method on CD uniformity
Author :
Nakamura, H. ; Ema, T. ; Hayasaki, K. ; Ito, S. ; Okumura, K.
Author_Institution :
Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
It is required that the wafer size is bigger and the pattern size is finer, Bigger wafer size needs the CD uniformity in wider area and finer pattern size needs more uniform CDs. Mixing development method was found to improve CD uniformity. The effect will be reported.
Keywords :
photolithography; proximity effect (lithography); CD uniformity; mixing development method; pattern size; wafer size; Friction; Indium tin oxide; Laboratories; Lighting; Microelectronics; Resists;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location :
Yokohama, Japan
Print_ISBN :
4-930813-97-2
DOI :
10.1109/IMNC.1999.797524
