Title :
A new approach for reducing line-edge roughness by using a cross-linked positive-tone resist
Author :
Yamaguchi, T. ; Namatsu, H. ; Nagase, M. ; Yamazaki, K. ; Kurihara, K.
Author_Institution :
NTT Basic Res. Labs., Kanagawa, Japan
Abstract :
Line-edge roughness (LER) of resist patterns has become a serious problem in sub-100nm lithography, because LER leads to variations in device characteristics. In addition to evaluating the degree of LER, many researchers have also tried to reduce LER, In this study, we have proposed cross-linking in positive-tone resist as a new approach for reducing LER.
Keywords :
nanotechnology; photolithography; photoresists; 100 nm; cross-linked positive-tone resist; reducing line-edge roughness; sub-100nm lithography; Aggregates; Chemicals; Computed tomography; Erbium; Fractionation; Laboratories; Lithography; Polymer films; Resists; Technical Activities Guide -TAG;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location :
Yokohama, Japan
Print_ISBN :
4-930813-97-2
DOI :
10.1109/IMNC.1999.797525
