DocumentCode
3221917
Title
A new approach for reducing line-edge roughness by using a cross-linked positive-tone resist
Author
Yamaguchi, T. ; Namatsu, H. ; Nagase, M. ; Yamazaki, K. ; Kurihara, K.
Author_Institution
NTT Basic Res. Labs., Kanagawa, Japan
fYear
1999
fDate
6-8 July 1999
Firstpage
158
Lastpage
159
Abstract
Line-edge roughness (LER) of resist patterns has become a serious problem in sub-100nm lithography, because LER leads to variations in device characteristics. In addition to evaluating the degree of LER, many researchers have also tried to reduce LER, In this study, we have proposed cross-linking in positive-tone resist as a new approach for reducing LER.
Keywords
nanotechnology; photolithography; photoresists; 100 nm; cross-linked positive-tone resist; reducing line-edge roughness; sub-100nm lithography; Aggregates; Chemicals; Computed tomography; Erbium; Fractionation; Laboratories; Lithography; Polymer films; Resists; Technical Activities Guide -TAG;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location
Yokohama, Japan
Print_ISBN
4-930813-97-2
Type
conf
DOI
10.1109/IMNC.1999.797525
Filename
797525
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