DocumentCode :
3221955
Title :
A sub-threshold halo implanted MOS implementation of an electronic neuron
Author :
Dutra, Odilon O. ; Colleta, Gustavo D. ; Ferreira, Luis H. C. ; Pimenta, Tales C.
Author_Institution :
Syst. Eng. & Inf. Technol. Inst., Fed. Univ. of Itajuba, Itajuba, Brazil
fYear :
2013
fDate :
15-18 Dec. 2013
Firstpage :
1
Lastpage :
4
Abstract :
This work describes a current mode implementation of Izhikevich neuron model designed with 130 nm halo implanted devices structured within matrices of order m × n capable of substantially increasing output impedance while also improving mismatch and requiring a power supply of only 250 mV.
Keywords :
MOS integrated circuits; neural nets; Izhikevich neuron model; current mode implementation; electronic neuron; output impedance; power supply; size 130 nm; sub-threshold halo implanted MOS implementation; voltage 250 mV; Capacitance; DTL; Izhikevich implementation; Neuron; halo implanted devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics (ICM), 2013 25th International Conference on
Conference_Location :
Beirut
Print_ISBN :
978-1-4799-3569-7
Type :
conf
DOI :
10.1109/ICM.2013.6734979
Filename :
6734979
Link To Document :
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