• DocumentCode
    3222029
  • Title

    A dynamic simulation of electron beam induced charging-up of insulators

  • Author

    Kotera, M. ; Yamaguchi, K. ; Suga, H.

  • Author_Institution
    Fac. of Eng., Osaka Inst. of Technol., Japan
  • fYear
    1999
  • fDate
    6-8 July 1999
  • Firstpage
    166
  • Lastpage
    167
  • Abstract
    It is known that insulating materials charge-up negatively or positively depending on its condition during the electron beam (EB) irradiation. This charging disturbs various applications of EB technologies. In the present study a simulation model is proposed to express the charging mechanism of insulators as a function of time under EB irradiation The material studied here is PMMA which is a typical EB resist. In the simulation, the electron deposition distribution is calculated by a Monte Carlo simulation of electron trajectories in the specimen, where the production of secondary electrons and Auger electrons is taken into account. The electron yield obtained by the simulation for non-charged specimen agrees quite well with the experimental result, which has been obtained by using a pulse beam technique.
  • Keywords
    Auger effect; Monte Carlo methods; electron beam effects; electron resists; polymers; secondary electron emission; semiconductor process modelling; surface charging; Auger electrons; EB resist; Monte Carlo simulation; PMMA; dynamic simulation; electron beam induced charging-up; electron deposition distribution; electron trajectories; electron yield; insulating materials; insulators; secondary electrons; simulation model; Conductivity; Electric potential; Electron beams; Information science; Insulation; Materials science and technology; Poisson equations; Production; Resists; Yield estimation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
  • Conference_Location
    Yokohama, Japan
  • Print_ISBN
    4-930813-97-2
  • Type

    conf

  • DOI
    10.1109/IMNC.1999.797529
  • Filename
    797529