DocumentCode
3222050
Title
In situ monitoring of semiconductor processes using synchrotron radiation [growth and cleaning]
Author
Takaku, Yuichi
Author_Institution
Res. Inst. for Sci. Meas., Tohoku Univ., Sendai, Japan
fYear
1999
fDate
6-8 July 1999
Firstpage
170
Lastpage
171
Abstract
In this review paper, discussion is focused on the in-situ monitoring of gas source molecular beam epitaxy (GSMBE) and photon-induced hydrogen removal on Si surfaces using synchrotron radiation photoelectron spectroscopy.
Keywords
X-ray photoelectron spectra; chemical beam epitaxial growth; elemental semiconductors; hydrogen; process monitoring; reviews; semiconductor growth; silicon; surface cleaning; GSMBE; Si surfaces; Si:H; gas source molecular beam epitaxy; in situ monitoring; photon-induced hydrogen removal; review; semiconductor processes; synchrotron radiation; synchrotron radiation photoelectron spectroscopy; Electron beams; Electron emission; Energy measurement; Hydrogen; Infrared spectra; Polarization; Radiation monitoring; Spectroscopy; Strontium; Synchrotron radiation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location
Yokohama, Japan
Print_ISBN
4-930813-97-2
Type
conf
DOI
10.1109/IMNC.1999.797531
Filename
797531
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