DocumentCode :
3222076
Title :
Role Of Ion-implantation Induced Damage And Surface States In The Response Of Gallium Arsenide Picosecond Photoconductive Switches
Author :
Smith, David D. ; Knudsen, J.F. ; Bowman, R.C. ; Moss, Steven C. ; Herman, M.H.
Author_Institution :
The Aerospace Corporation
fYear :
1988
fDate :
2-4 Nov. 1988
Firstpage :
149
Lastpage :
151
Keywords :
Circuits; Dielectric constant; Gallium arsenide; Linearity; Microelectronics; Photoconductivity; Raman scattering; Reflectivity; Spectroscopy; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1988. Conference Proceedings. LEOS '88.
Conference_Location :
Santa Clara, CA, USA
Type :
conf
DOI :
10.1109/LEOS.1988.689791
Filename :
689791
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3222076
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