DocumentCode :
3222112
Title :
Optoelectronic and interfacial characteristics of GaAs/Si, GaAs/Ge/Si,GaAs/Ge and GaAs/Ge/SiO2/Si heterostructures
Author :
Awal, M.A. ; Lee, E.H.
Author_Institution :
AT&T Engineering Research Center
fYear :
1988
fDate :
2-4 Nov 1988
Firstpage :
154
Lastpage :
155
Keywords :
Capacitance-voltage characteristics; Diodes; Gallium arsenide; Gold; Photodiodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1988. Conference Proceedings. LEOS '88.
Type :
conf
DOI :
10.1109/LEOS.1988.689793
Filename :
689793
Link To Document :
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