An analytical transit time model for short channel MOSFET´s

Author

Kasemsuwan, Varakom

Author_Institution

Dept. of Electron., King Mongkut´´s Inst. of Technol., Bangkok, Thailand

fYear

2000

fDate

2000

Firstpage

72

Lastpage

75

Abstract

An analytical transit time model for short channel MOSFETs is presented. Several second order effects such as short channel and narrow width effects, mobility degradation, parasitic drain and source resistance, velocity saturation and channel length modulation are included in the model. The model shows good agreements with experimental and two dimensional numerical data over a wide range of biasing conditions

Keywords

MOSFET; carrier mobility; electric resistance; semiconductor device models; 2D numerical data; analytical transit time model; biasing conditions; channel length modulation; mobility degradation; narrow width effects; parasitic drain resistance; parasitic source resistance; second order effects; short channel MOSFETs; short channel effects; velocity saturation; Analytical models; Cutoff frequency; Degradation; Electric resistance; MOSFET circuits; Microprocessors; Numerical simulation; Poisson equations; Predictive models; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2000. Proceedings. ICSE 2000. IEEE International Conference on

Conference_Location

Guoman Port Dickson Resort

Print_ISBN

0-7803-6430-9

Type

conf

DOI

10.1109/SMELEC.2000.932436

Filename

932436