A V-Band BiCMOS power detector for millimeter-wave applications

Author

Serhan, A. ; Lauga-Larroze, E. ; Fournier, J.-M.

Author_Institution

IMEP-LAHC, Univ. de Grenoble, Grenoble, France

fYear

2013

fDate

15-18 Dec. 2013

Firstpage

1

Lastpage

4

Abstract

This paper presents a V-Band Bi-CMOS 55nm power detector designed to be used in mmWave circuits for automatic level control (ALC) and built-in self test (BIST). The proposed detector shows a simulated detection range of about 35 dB in the 50 GHz to 90 GHz frequency band. Sensitivity to -30 dBm input power is demonstrated thanks to the use of common base bipolar transistor as input stage. The design and optimization steps are described in order to provide a general methodology to design high performance power detectors.

Keywords

BiCMOS integrated circuits; MIMIC; built-in self test; integrated circuit testing; level control; power integrated circuits; power measurement; V-band BiCMOS power detector; automatic level control; built-in self test; common base bipolar transistor; frequency 50 GHz to 90 GHz; millimeter-wave applications; size 55 nm; Bandwidth; BiCMOS integrated circuits; CMOS integrated circuits; CMOS technology; Communication systems; Indexes; Rectifiers; Bi-CMOS; Power detector; V-Band; mmWave;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics (ICM), 2013 25th International Conference on

Conference_Location

Beirut

Print_ISBN

978-1-4799-3569-7

Type

conf

DOI

10.1109/ICM.2013.6735000

Filename

6735000