Title :
Ghost exposure of chemically amplified resist caused by acids generated in environmental air with KrF exposure
Author :
Kawai, Y. ; Deguchi, K. ; Nakamura, J.
Author_Institution :
NTT Telecommun. Energy Lab., Kanagawa, Japan
Abstract :
We discuss the ghost exposure of a chemically amplified resist in KrF excimer laser lithography, which is attributed to acids in the environmental air generated by laser irradiation. These acids diffused into the resist film and acted as catalytic acids. The ghost exposure expanded to more than 10 mm outside the exposure field and deteriorated the patterning characteristics. Controlling the environmental air so that it does not generate acids is important in order to improve CD control.
Keywords :
laser beam applications; photolithography; KrF excimer laser lithography; catalytic acids; chemically amplified resist; critical dimensions control; environmental air control; ghost exposure; patterning characteristics; Apertures; Character generation; Chemical lasers; Energy resolution; Gases; Joining processes; Lithography; Optical control; Resists; X-rays;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location :
Yokohama, Japan
Print_ISBN :
4-930813-97-2
DOI :
10.1109/IMNC.1999.797550
