Effects of hydrogen on the formation of SiGe/Si heterostructures

Author

Yasuda, Y. ; Okada, M.

Author_Institution

Dept. of Crystalline Mater. Sci., Nagoya Univ., Japan

fYear

1999

fDate

6-8 July 1999

Firstpage

210

Lastpage

211

Abstract

In this report, we review and discuss our results obtained on the surface segregation of Ge atoms and surfactant effects of hydrogen atoms in Si overlayer growth on Ge/Si(100) by gas-source molecular beam epitaxy (GSMBE) using GeH/sub 4/ and Si/sub 2/H/sub 6/. The layer-by-layer growth rate of the Si overlayers was observed in-situ by reflection high-energy electron diffraction (RHEED) intensity oscillation periods.

Keywords

Ge-Si alloys; chemical beam epitaxial growth; elemental semiconductors; hydrogen; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; semiconductor materials; silicon; surface segregation; surfactants; GSMBE; H/sub 2/; SiGe-Si; SiGe/Si heterostructure; hydrogen surfactant; in-situ RHEED intensity oscillation; layer-by-layer growth; surface segregation; Atomic beams; Atomic layer deposition; Crystalline materials; Germanium silicon alloys; Hydrogen; Molecular beam epitaxial growth; Photonic band gap; Silicon germanium; Surface morphology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International

Conference_Location

Yokohama, Japan

Print_ISBN

4-930813-97-2

Type

conf

DOI

10.1109/IMNC.1999.797551

Filename

797551