Title :
Effects of hydrogen on the formation of SiGe/Si heterostructures
Author :
Yasuda, Y. ; Okada, M.
Author_Institution :
Dept. of Crystalline Mater. Sci., Nagoya Univ., Japan
Abstract :
In this report, we review and discuss our results obtained on the surface segregation of Ge atoms and surfactant effects of hydrogen atoms in Si overlayer growth on Ge/Si(100) by gas-source molecular beam epitaxy (GSMBE) using GeH/sub 4/ and Si/sub 2/H/sub 6/. The layer-by-layer growth rate of the Si overlayers was observed in-situ by reflection high-energy electron diffraction (RHEED) intensity oscillation periods.
Keywords :
Ge-Si alloys; chemical beam epitaxial growth; elemental semiconductors; hydrogen; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; semiconductor materials; silicon; surface segregation; surfactants; GSMBE; H/sub 2/; SiGe-Si; SiGe/Si heterostructure; hydrogen surfactant; in-situ RHEED intensity oscillation; layer-by-layer growth; surface segregation; Atomic beams; Atomic layer deposition; Crystalline materials; Germanium silicon alloys; Hydrogen; Molecular beam epitaxial growth; Photonic band gap; Silicon germanium; Surface morphology; Temperature;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location :
Yokohama, Japan
Print_ISBN :
4-930813-97-2
DOI :
10.1109/IMNC.1999.797551
